Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier offer higher usable current densities compared to conventional bipolar transistors, while maintaining the simple gate-drive characteristics of standard power MOSFETs. This combination makes them highly advantageous for a wide range of high-voltage, high-current applications, delivering efficient and reliable performance.
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IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package
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International Rectifier’s Insulated Gate Bipolar Transistors (IGBTs) combine high current density with simple gate-drive requirements similar to power MOSFETs. Offering superior performance over traditional bipolar transistors, they are ideal for high-voltage, high-current applications, delivering efficient, reliable operation across various demanding industrial and power electronics systems.
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