These enhancement-mode (normally-off) power transistors feature a vertical DMOS structure combined with Supertex’s proven silicon gate technology. This design delivers the power-handling strength of bipolar transistors along with the high input impedance and negative temperature coefficient typical of MOSFETs. Free from thermal runaway and secondary breakdown, Supertex Vertical DMOS Power FETs are ideal for various switching and amplification applications requiring high breakdown voltage, fast switching, low input capacitance, and high input impedance.
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IRF9523 MOSFET - 60V 5A P-Channel Power MOSFET TO-220 Package
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These enhancement-mode power transistors use a vertical DMOS structure and Supertex’s silicon gate process, offering bipolar-like power handling with MOSFET advantages. They feature high input impedance, low input capacitance, and are immune to thermal runaway. Ideal for switching and amplification, they deliver fast switching and high breakdown voltage performance.
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